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advance product information july 26, 2007 1 triquint semiconductor texas: phone (972)994-8465 fax (972)9 94-8504 email: info-mmw@tqs.com web: www.triquint.com 2-20 ghz lna/gain block TGA2513-SM key features ? frequency range: 2-20 ghz ? 17 db nominal gain ? 16 dbm nominal p1db ? 2.5 db midband noise figure ? bias conditions: vd=5v, idq=75 ma, vg2=2v ? package dimensions: 4.0 x 4.0 x 0.9 mm product description the triquint TGA2513-SM is a packaged lna/gain block. the lna operates from 2-20 ghz and is designed using triquint?s pr oven standard 0.15 um gate phemt production process. the TGA2513-SM provides a nominal 16 dbm of output power at 1 db gain compression with a sma ll signal gain of 17 db. typical noise figure is < 3 db from 2-15 ghz. the TGA2513-SM is suitable for a variety of wideband electronic warfare systems such as radar warning receivers, electronic counter measures, decoys, jammers and phased array systems. evaluation boards are available upon request. lead-free and rohs compliant primary applications ? wideband gain block / lna ? x-ku point to point radio ? if & lo buffer applications note: this device is early in the characterization process prio r to finalizing all electrical specifications. specifications are subject to change without notice. measured performance bias conditions: vd = 5 v, idq =75 ma, vg2 = 2v -21 -18 -15 -12 -9 -6 -3 0 3 6 9 12 15 18 21 2468101214161820 frequency (ghz) gain (db) -28 -24 -20 -16 -12 -8 -4 0 4 8 12 16 20 24 28 return loss (db) gain input output 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 2 4 6 8 10 12 14 16 18 20 frequency (ghz) noise figure (db)
advance product information july 26, 2007 2 triquint semiconductor texas: phone (972)994-8465 fax (972)9 94-8504 email: info-mmw@tqs.com web: www.triquint.com TGA2513-SM table i maximum ratings 1/ symbol parameter value notes vd positive supply voltage 5 v 2/ vg1 gate 1 supply voltage range -1v to 0 v vg2 gate 2 supply voltage range (vd ? 3) to (vd ? 2) v id positive supply current 151 ma 2/ | ig | gate supply current 10 ma p in input continuous wave power 21 dbm 2 / p d power dissipation see note 3 2/, 3 / t ch operating channel temperature 117 c 4 / t m mounting temperature (30 seconds) 260 c t stg storage temperature -65 to 117 c 1 / these ratings represent the maximum operable values for this device. 2 / current is defined under no rf drive conditions. combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 3 / for a median life time of 1e+6 hrs, power dissipation is limited to: p d (max) = (117 c ? tbase c) / 32 ( c/w) 4 / junction operating temperature will directly affect the device median time to failure (t m ). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.
advance product information july 26, 2007 3 triquint semiconductor texas: phone (972)994-8465 fax (972)9 94-8504 email: info-mmw@tqs.com web: www.triquint.com table iii thermal information parameter test conditions t ch ( o c) jc ( c/w) t m (hrs) jc thermal resistance (channel to backside of carrier) vd = 5 v id = 75 ma pdiss = 0.375 w 97 32 8.1 e+6 note: worst case condition with no rf applied, 100% of dc power is dissipated. package temperature @ 85 c table ii rf characterization table (t a = 25 c, nominal) vd = 5v, id = 75 ma vg2 = 2v vg1 = ~ -60 mv symbol parameter test condition nominal units gain small signal gain f = 2-20 ghz 17 db irl input return loss f = 2-20 ghz 12 db orl output return loss f = 2-20 ghz 10 db nf noise figure f = 2-20 ghz 3 db p 1db output power @ 1db gain compression f = 2-20 ghz 16 dbm TGA2513-SM
advance product information july 26, 2007 4 triquint semiconductor texas: phone (972)994-8465 fax (972)9 94-8504 email: info-mmw@tqs.com web: www.triquint.com -21 -18 -15 -12 -9 -6 -3 0 3 6 9 12 15 18 21 0 2 4 6 8 1012141618202224 frequency (ghz) gain (db) -28 -24 -20 -16 -12 -8 -4 0 4 8 12 16 20 24 28 return loss (db) gain input output 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 2 4 6 8 10 12 14 16 18 20 frequency (ghz) noise figure (db) measured performance bias conditions: vd = 5 v, idq =75 ma, vg2 = 2v, vg1 = ~-60mv, typical TGA2513-SM
advance product information july 26, 2007 5 triquint semiconductor texas: phone (972)994-8465 fax (972)9 94-8504 email: info-mmw@tqs.com web: www.triquint.com TGA2513-SM measured performance bias conditions: vd = 5 v, idq =75 ma, vg2 = 2v, vg1 = ~-60mv, typical 16 18 20 22 24 26 28 30 2 4 6 8 10 12 14 16 18 20 frequency(ghz) output toi dbm) 0 2 4 6 8 10 12 14 16 18 20 2 4 6 8 10 12 14 16 18 20 frequency(ghz) p1db(dbm)
advance product information july 26, 2007 6 triquint semiconductor texas: phone (972)994-8465 fax (972)9 94-8504 email: info-mmw@tqs.com web: www.triquint.com measured performance bias conditions: vd = 5 v, idq =75 ma, vg2 = 2v, vg1 = ~-60mv, typical measured data is taken using connectorized evaluation boards. the reference plane is at rf connectors, and hence connector and board loss has not been de-embedded. -27 -24 -21 -18 -15 -12 -9 -6 -3 0 0 2 4 6 8 10 12 14 16 18 20 22 24 frequency (ghz) input return loss (db) -40 deg c 25 deg c 0 deg c +25 deg c +50 deg c +75 deg c -22 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 024681012141618202224 frequency (ghz) output return loss (db) -40 deg c -25 deg c 0 deg c +25 deg c +50 deg c +75 deg c 0 2 4 6 8 10 12 14 16 18 20 0 2 4 6 8 1012141618202224 frequency (ghz) gain (db) -40 deg c -25 deg c 0 deg c +25 deg c +50 deg c +75 deg c TGA2513-SM
advance product information july 26, 2007 7 triquint semiconductor texas: phone (972)994-8465 fax (972)9 94-8504 email: info-mmw@tqs.com web: www.triquint.com TGA2513-SM package pinout diagram 13 2.1 x 2.1 mm ground pad 66 55 88 77 99 10 10 1111 44 22 33 11 1212 pin description 1, 3, 4, 5, 7, 8, 10, 13 ground 2 rf input 6 vg1 9 rf output 11 vd 12 vg2 tga 2513 date code lot code bottom view top view dot indicates pin 1
advance product information july 26, 2007 8 triquint semiconductor texas: phone (972)994-8465 fax (972)9 94-8504 email: info-mmw@tqs.com web: www.triquint.com TGA2513-SM mechanical drawing gaas mmic devices are susceptible to damage from electrostatic discharge. pr oper precautions should be observed during handling, assembly and test. bottom view tolerance: +/- 0.05 units: mm 1.19 1.19 1 2 3 4 5 6 7 8 10 9 11 12 13 2.1 x 2.1 0.1mm ground pad 0.65 0.64 0.30 0 0 4.0 0.1 4.0 0.1 0.95 3.05 0.95 3.05
advance product information july 26, 2007 9 triquint semiconductor texas: phone (972)994-8465 fax (972)9 94-8504 email: info-mmw@tqs.com web: www.triquint.com recommended board layout assembly TGA2513-SM gaas mmic devices are susceptible to damage from electrostatic discharge. pr oper precautions should be observed during handling, assembly and test. recommended bias-up procedure 1. ensure no rf power i s appli ed to the device 2. pinch-off device by se tting vg (v g1) to - 1 v 3. incre a se v d to 5v whi l e mo nitori ng g a te c u r r ent 4. incre a se v c (vg2) to 2v 5. incre a se v g (vg1 ) u n til dr ai n current reaches 75 ma 6. apply rf power recommended bias-down procedure 1. turn off rf pow er 2. decrease vg (vg1) to -1v 3. decrease vc (vg2) to 0 v 4. decrease vd to 0 v 1uf 1206 capacitor 5 ohm 0603 resistor 100pf 0402 capacitor
advance product information july 26, 2007 10 triquint semiconductor texas: phone (972)994-8465 fax (972)9 94-8504 email: info-mmw@tqs.com web: www.triquint.com evaluation board layout details maximum density of via holes under ground paddle for optimum electrical and thermal performance via holes in the four corners of the package are required to ensure stable operation. these vias need to be connected to ground paddle TGA2513-SM
advance product information july 26, 2007 11 triquint semiconductor texas: phone (972)994-8465 fax (972)9 94-8504 email: info-mmw@tqs.com web: www.triquint.com TGA2513-SM evaluation board evaluation board is rogers ro4003 8mil thickness 0.5oz standard copper cladding dielectric constant (er) = 3.38 TGA2513-SM
advance product information july 26, 2007 12 triquint semiconductor texas: phone (972)994-8465 fax (972)9 94-8504 email: info-mmw@tqs.com web: www.triquint.com ordering information part package style TGA2513-SM qfn 12l 4x4 surface mount recommended surface mount package assembly proper esd precautions must be followed while handling packages. clean the board with acetone. rinse with alcohol. allow the circuit to fully dry. triquint recommends using a conductive solder paste for attachment. follow solder paste and reflow oven vendors? recommendations when developing a solder reflow profile. typical solder reflow profiles are listed in the table below. hand soldering is not recommended. solder paste can be applied using a stencil printer or dot placement. the volume of solder paste depends on pcb and component layout and should be well controlled to ensure consistent mechanical and electrical performance. clean the assembly with alcohol. gaas mmic devices are susceptible to damage from electrostatic discharge. pr oper precautions should be observed during handling, assembly and test. typical solder reflow profiles reflow profile snpb pb free ramp-up rate 3 c/sec 3 c/sec activation time and temperature 60 ? 120 sec @ 140 ? 160 c 60 ? 180 sec @ 150 ? 200 c time above melting point 60 ? 150 sec 60 ? 150 sec max peak temperature 240 c 260 c time within 5 c of peak temperature 10 ? 20 sec 10 ? 20 sec ramp-down rate 4 ? 6 c/sec 4 ? 6 c/sec TGA2513-SM

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